PhD position on SiC quantum devices
We offer a 3.5-years PhD position for a motivated researcher to join our work on spin qubits in silicon carbide (SiC). Colour centres in SiC have recently be shown to uniquely combine excellent spin properties with ultrastable optical transitions for spin-photon interfacing. Our goal is to exploit the technological properties of this semiconductor, with established growth, doping and fabrication, to develop quantum devices to build building blocks for the future Quantum Internet.
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